ZVN4310A Diodes Zetex, ZVN4310A Datasheet - Page 2

• Manufacturer Part Number: ZVN4310A
• Description: MOSFET N-CH 100V 900MA TO92-3
• Manufacturer: Diodes Zetex

Specifications of ZVN4310A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 900mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 850mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%
(2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
THERMAL CHARACTERISTICS
PARAMETER
Input Capacitance (2)
Common Source
Output Capacitance
(2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
PARAMETER
Thermal Resistance:Junction to Ambient
ZVN4310A
1.0
0.75
0.50
0.25
-40
-20
0
20 40 60 80 100 120
T -Temperature (°C)
Derating curve
Junction to Case
SYMBOL MIN.
C
C
C
t
t
t
t
d(on)
r
d(off)
f
iss
oss
rss
140
160
180
TYP.
200
amb
3-394
= 25°C unless otherwise stated).
MAX.
350
140
30
8
25
30
16
SYMBOL
100
150
R
R
50
Maximum transient thermal impedance
0
0.0001
th(j-amb)
th(j-case)
UNIT
pF
pF
pF
ns
ns
ns
ns
t
1
0.001
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
D.C.
t
P
D=t
Pulse Width (seconds)
1
/t
CONDITIONS.
V
V
R
P
0.01
DS
DD
GS
=25 V, V
=50
MAX.
150
25V, V
50
0.1
GEN
GS
1
=0V, f=1MHz
=10V, I
10
UNIT
°C/W
°C/W
D
=3A
100