IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 4
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IRFU420APBF
Manufacturer Part Number
IRFU420APBF
Description
MOSFET N-CH 500V 3.3A I-PAK
Manufacturer
Vishay
Specifications of IRFU420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU420APBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 786
Document Number: 91274
10000
1000
100
10
0.1
1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.4
1
Drain-to-Source Voltage
T = 150 C
J
V
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
0.6
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
10
T = 25 C
0.8
Ciss
Coss
J
Crss
f = 1 MHZ
°
100
1.0
V
GS
SHORTED
= 0 V
1.2
1000
100
0.1
Fig 8. Maximum Safe Operating Area
20
15
10
10
5
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
2.5A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
100
BY R
8
DS(on)
V
V
V
FOR TEST CIRCUIT
10us
100us
1ms
10ms
DS
DS
DS
SEE FIGURE
1000
= 400V
= 250V
= 100V
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