FQA46N15 Fairchild Semiconductor, FQA46N15 Datasheet

MOSFET N-CH 150V 50A TO-3P

FQA46N15

Manufacturer Part Number
FQA46N15
Description
MOSFET N-CH 150V 50A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA46N15

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3250pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
36 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
50 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA46N15
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA46N15
Manufacturer:
FSC
Quantity:
86 755
©2007 Fairchild Semiconductor Corporation
FQA46N15 / FQA46N15_F109 Rev. A1
FQA46N15 / FQA46N15_F109
150V N-Channel MOSFET
Features
• 50A, 150V, R
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 100pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
= 0.042Ω @V
G
D
S
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
= 25°C)
Parameter
Parameter
TO-3PN
FQA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Typ
0.24
--
--
FQA46N15
-55 to +175
S
D
35.3
± 25
1.67
150
200
650
250
300
6.0
50
50
25
Max
0.6
40
--
QFET
August 2007
www.fairchildsemi.com
Units
Units
°C/W
°C/W
°C/W
W/°C
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQA46N15 Summary of contents

Page 1

... R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQA46N15 / FQA46N15_F109 Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect GS transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... V = 25V ≤ 45.6A, di/dt ≤300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA46N15 / FQA46N15_F109 Rev. A1 Package Reel Size TO-3PN -- TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C iss 4000 C oss 3000 C 2000 rss 1000 Drain-Source Voltage [V] DS FQA46N15 / FQA46N15_F109 Rev. A1 Figure 2. Transfer Characteristics Notes : ※ 1. 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V GS = 20V ※ Note : ℃ ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA46N15 / FQA46N15_F109 Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µ 0.0 100 150 200 -100 o C] Figure 10. Maximum Drain Current µ s 100 µ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQA46N15 / FQA46N15_F109 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FQA46N15 / FQA46N15_F109 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FQA46N15 / FQA46N15_F109 Rev. A1 TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQA46N15 / FQA46N15_F109 Rev. A1 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ ...

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