FDP33N25 Fairchild Semiconductor, FDP33N25 Datasheet - Page 5

• Manufacturer Part Number: FDP33N25
• Description: MOSFET N-CH 250V 33A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP33N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2135pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Forward Transconductance Gfs (max / Min): 26.6 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 235 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP33N25 / FDPF33N25T Rev. B
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FDPF33N25T
Figure 11-1. Transient Thermal Response Curve for FDP33N25
10
10
10
10
10
10
-1
-2
0
10
-1
-2
0
10
-5
-5
D=0.5
D=0.5
0.01
0.05
0.02
0.02
0.05
0.01
0.2
0.2
0.1
0.1
10
10
single pulse
-4
-4
t
t
1
1
, Square W ave Pulse Duration [sec]
, Square Wave Pulse Duration [sec]
single pulse
10
10
-3
-3
(Continued)
5
10
10
-2
-2
* Notes :
* Notes :
1. Z
2. Duty Factor, D=t
3. T
1. Z
2. Duty Factor, D=t
3. T
P
10
10
DM
P
θ
JM
DM
-1
JC
-1
θ
JM
JC
(t) = 3.4
- T
(t) = 0.53
- T
C
C
= P
t
= P
1
t
t
1
2
DM
t
o
2
DM
C/W Max.
* Z
o
10
C/W Max.
* Z
10
1
θ
1
/t
0
JC
/t
θ
0
JC
2
2
(t)
(t)
10
10
1
1
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