IRFD024 Vishay, IRFD024 Datasheet - Page 2

MOSFET N-CH 60V 2.5A 4-DIP

IRFD024

Manufacturer Part Number
IRFD024
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Datasheet

Specifications of IRFD024

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFD024

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IRFD024, SiHFD024
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
T
GS
GS
J
V
R
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
G
J
Reference to 25 °C, I
= 10 V
= 10 V
= 25 °C, I
= 18 Ω, R
= 48 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DS
DS
GS
DS
DD
-
= V
= 25 V, I
F
= 0 V, I
= 60 V, V
V
= 30 V, I
V
V
= 17 A, dI/dt = 100 A/µs
GS
DS
S
D
GS
GS
GS
I
= 2.5 A, V
D
= 1.7Ω, see fig. 10
= ± 20 V
, I
= 25 V,
= 0 V, T
= 0 V,
see fig. 6 and 13
= 17 A, V
D
D
D
D
= 250 µA
= 250 µA
GS
I
= 1.5 A
D
= 17 A,
= 1.5 A
= 0 V
D
J
GS
= 1 mA
= 150 °C
DS
G
G
= 0 V
b
= 48 V,
b
MAX.
D
S
b
b
b
120
D
S
b
MIN.
0.90
2.0
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81352-Rev. A, 16-Jun-08
Document Number: 91126
0.061
TYP.
0.29
640
360
4.0
6.0
79
13
58
25
42
80
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.10
0.64
S
250
180
4.0
5.8
2.5
1.5
25
25
11
20
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V

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