IRF520 Vishay, IRF520 Datasheet - Page 6

• Manufacturer Part Number: IRF520
• Description: MOSFET N-CH 100V 9.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF520

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520; IRF520IR

IRF520, SiHF520
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
91017_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
500
400
300
200
100
600
0
25
V
DD
Starting T
= 25 V
50
J
75
, Junction Temperature (°C)
100
125
Top
Bottom
150
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
3.8 A
6.5 A
9.2 A
Same type as D.U.T.
I
D
Current regulator
175
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-81240-Rev. A, 16-Jun-08
Document Number: 91017
D.U.T.
I
D
+
-
V
DS