IRLIZ44G Vishay, IRLIZ44G Datasheet

MOSFET N-CH 60V 30A TO220FP

IRLIZ44G

Manufacturer Part Number
IRLIZ44G
Description
MOSFET N-CH 60V 30A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRLIZ44G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 18A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
66nC @ 5V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLIZ44G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLIZ44G
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRLIZ44GPBF
Manufacturer:
VISHAY
Quantity:
8 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
Document Number: 91318
S09-0037-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 51 A, dI/dt ≤ 250 A/µs, V
= 25 V, starting T
(Ω)
a
J
G
= 25 °C, L = 518 µH, R
D
c
S
DD
b
V
≤ V
GS
= 5 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 175 °C.
60
66
12
43
G
= 25 Ω, I
D
S
C
Power MOSFET
0.028
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 5 V
= 30 A (see fig. 12c).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRLIZ44GPbF
SiHLIZ44G-E3
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Logic-Level Gate Drive
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
R
DS(on)
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
IRLIZ44G, SiHLIZ44G
GS
design,
= 4 V and 5 V
- 55 to + 175
LIMIT
300
± 10
0.32
120
400
4.5
1.1
60
30
21
48
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
°C
W
RoHS
V
A
COMPLIANT
and
1

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IRLIZ44G Summary of contents

Page 1

... TO-220 FULLPAK IRLIZ44GPbF SiHLIZ44G- °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω (see fig. 12c ≤ 175 ° IRLIZ44G, SiHLIZ44G Vishay Siliconix ( RMS Specified and device design, low on-resistance SYMBOL LIMIT ± 120 DM 0.32 ...

Page 2

... IRLIZ44G, SiHLIZ44G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91318 S09-0037-Rev. A, 19-Jan- °C Fig Typical Transfer Characteristics C = 175 °C Fig Normalized On-Resistance vs. Temperature C IRLIZ44G, SiHLIZ44G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLIZ44G, SiHLIZ44G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91318 S09-0037-Rev. A, 19-Jan-09 ...

Page 5

... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91318 S09-0037-Rev. A, 19-Jan-09 IRLIZ44G, SiHLIZ44G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRLIZ44G, SiHLIZ44G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91318 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig.14 - For N-Channel IRLIZ44G, SiHLIZ44G Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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