FDPF8N50NZ Fairchild Semiconductor, FDPF8N50NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF8N50NZ
• Description: MOSFET N-CH 500V 8A TO220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF8N50NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 735pF @ 25V
• Power - Max: 40.3W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.77 Ohms
• Forward Transconductance Gfs (max / Min): 6.3 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 8 A
• Power Dissipation: 40.3 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: Through Hole
• Gate Charge Qg: 14 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8N50NZ / FDPF8N50NZ Rev.A
Typical Performance Characteristics

vs. Case Temperature
 Figure 11. Maximum Drain Current
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.2
1.1
1.0
0.9
0.8
0.1
10
50
10
-100
8
6
4
2
0
1
25
1
- FDP8N50NZ 
Operation in This Area
is Limited by R
vs. Temperature
-50
50
T
T
J
V
C
, Junction Temperature
DS
, Case Temperature
, Drain-Source Voltage [V]
10
DS(on)
75
0
*Notes:
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
100
50
o
C
o
100
10ms
C
[
DC
o
1ms
*Notes:
C
1. V
2. I
[
100
]
o
100
125
C
D
]

GS
= 250
s
= 0V
10

A

150
1000
s
150
(Continued)
4
2.5
2.0
1.5
1.0
0.5
0.0
0.01
Figure 10. Maximum Safe Operating Area
-100
0.1
50
10
Figure 8. On-Resistance Variation
1
1
Operation in This Area
is Limited by R
- FDPF8N50NZ
-50
T J
V
DS
vs. Temperature
, Drain-Source Voltage [V]
10
DS(on)
0
ti
*Notes:
1. T
2. T
3. Single Pulse
T
C
J
50
= 150
= 25
DC
o
10ms
C
o
100
C
100
t
1ms
100
*Notes:

[
1. V
2. I
o
s
C]
D
150
GS
10
= 4A
www.fairchildsemi.com

= 10V
1000
s
200