IRF9510 Vishay, IRF9510 Datasheet - Page 3

• Manufacturer Part Number: IRF9510
• Description: MOSFET P-CH 100V 4A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9510

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.7nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 43W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9510

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
91072_01
91072_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
0
Top
Bottom
0
- V
- V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
- 15 V
- 10 V
DS
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
GS
V
DS ,
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
C
- 4.5 V
- 4.5 V
C
= 175 °C
= 25 °C
91072_04
91072_03
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
1
0
- 60- 40 - 20 0
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= - 4.0 A
= - 10 V
- V
5
T
GS ,
J ,
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
IRF9510, SiHF9510
20 40 60 80 100 120 140 160 180
°
6
C
175
7
°
Vishay Siliconix
C
20 µs Pulse Width
V
DS
8
=
- 50 V
9
www.vishay.com
10
3