FCP7N60 Fairchild Semiconductor, FCP7N60 Datasheet - Page 5

• Manufacturer Part Number: FCP7N60
• Description: MOSFET N-CH 600V 7A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: SuperFET™r

Specifications of FCP7N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 83W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 6 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Fall Time: 32 ns
• Rise Time: 55 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FCP7N60_NL; FCP7N60_NL

FCP7N60/FCPF7N60/FCPF7N60YDTU Rev. A1
Typical Performance Characteristics
Figure 11-1. Transient Thermal Response Curve for FCP7N60
Figure 11-2. Transient Thermal Response Curve for FCPF7N60
1 0
1 0
1 0
1 0
1 0
1 0
-1
-2
-1
-2
0
1 0
0
1 0
-5
-5
D = 0 .5
0 .0 2
0 .0 1
0 .0 5
0 .0 2
D = 0 .5
0 .0 5
0 .1
0 .0 1
0 .2
0 .1
0 .2
s in g le p u ls e
1 0
1 0
s in g le p u ls e
-4
-4
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
-3
(Continued)
5
1 0
1 0
-2
-2
※
P
1 0
※
1 0
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
N o te s :
1 . Z
2 . D u ty F a c to r, D = t
3 . T
-1
-1
N o te s :
P
θ JC
J M
DM
θ JC
JM
(t) = 1 .5
- T
(t) 4 .0
- T
C
C
t
= P
1
= P
t
2
t
D M
℃
1
℃
D M
1 0
t
1 0
/W M a x.
2
* Z
/W M a x .
* Z
0
0
1
/t
θ JC
1
θ JC
2
/t
(t)
2
(t)
1 0
1 0
1
1
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