IRF624 Vishay, IRF624 Datasheet - Page 7
![MOSFET N-CH 250V 4.4A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF624
Manufacturer Part Number
IRF624
Description
MOSFET N-CH 250V 4.4A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF624.pdf
(8 pages)
Specifications of IRF624
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF624
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF624A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF624A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
IRF624B
Manufacturer:
FSC
Quantity:
2 000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91029.
Document Number: 91029
S-82998-Rev. A, 12-Jan-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level and 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• I
SD
Diode recovery
current
controlled by duty factor
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
IRF624, SiHF624
Vishay Siliconix
www.vishay.com
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