IRF9530 Vishay, IRF9530 Datasheet - Page 2

• Manufacturer Part Number: IRF9530
• Description: MOSFET P-CH 100V 12A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9530

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 860pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9530

IRF9530, SiHF9530
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
J
V
GS
GS
R
= 25 °C, I
T
DS
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
G
= - 10 V
= - 10 V
= 25 °C, I
= - 80 V, V
= 12 Ω,R
V
V
V
V
V
DS
f = 1.0 MHz, see fig. 5
DS
DS
DD
TYP.
GS
0.50
TEST CONDITIONS
-
-
= - 50 V, I
= - 100 V, V
= V
= - 50 V, I
F
= 0 V, I
V
V
= - 12 A, dI/dt = 100 A/µs
V
GS
DS
D
S
GS
GS
I
GS
= - 12 A, V
D
= 3.9 Ω, see fig. 10
, I
= ± 20 V
= - 25 V,
= - 12 A, V
= 0 V,
D
D
= 0 V, T
see fig. 6 and 13
= - 250 µA
D
= - 250 µA
D
I
= - 7.2 A
D
= - 12 A,
GS
D
= - 7.2 A
= 0 V
= - 1 mA
GS
J
G
G
= 150 °C
DS
= 0 V
b
= - 80 V,
b
MAX.
D
S
b
b
D
S
1.7
b
62
-
b
- 100
MIN.
- 2.0
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81272-Rev. A, 16-Jun-08
Document Number: 91076
- 0.10
TYP.
0.46
860
340
120
4.5
7.5
93
12
52
31
39
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.30
- 6.3
0.92
S
- 12
- 48
240
6.8
38
21
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nC
nH
µC
nA
µA
pF
ns
ns
V
V
Ω
S
A
V