IRF730A Vishay, IRF730A Datasheet - Page 2

• Manufacturer Part Number: IRF730A
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730A

IRF730A, SiHF730A
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Ambient
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
oss
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
C
R
V
oss
t
t
R
I
I
C
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
SM
I
t
t
on
thCS
DS
oss
oss
t
SD
thJC
thJA
iss
rss
S
rr
gd
fs
gs
r
f
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
J
V
GS
GS
GS
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
Reference to 25 °C, I
J
= 10 V
= 0 V
= 10 V
= 320 V, V
= 25 °C, I
V
V
V
V
R
TYP.
TEST CONDITIONS
V
f = 1.0 MHz, see fig. 5
oss
0.50
DS
DS
DD
GS
G
DS
-
-
while V
= 12 Ω, R
= 400 V, V
F
= V
= 200 V, I
= 0 V, I
V
= 50 V, I
V
see fig. 10
= 3.5 A, dI/dt = 100 A/µs
V
GS
V
S
DS
V
GS
GS
I
GS
DS
D
DS
= 5.5 A, V
V
= ± 30 V
= 25 V,
, I
= 3.5 A, V
= 0 V,
DS
see fig. 6 and 13
DS
= 0 V, T
= 320 V, f = 1.0 MHz
D
= 1.0 V, f = 1.0 MHz
D
D
D
= 250 µA
= 0 V to 320 V
= 250 µA
D
is rising from 0 % to 80 % V
I
GS
D
= 3.3 A
= 57 Ω,
= 3.5 A
b
= 3.3 A
D
= 0 V
= 1 mA
GS
J
G
DS
= 125 °C
= 0 V
= 320 V
b
MAX.
1.70
D
S
b
b
c
62
-
b
MIN.
400
2.0
3.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DS
S-83000-Rev. A, 19-Jan-09
Document Number: 91045
.
TYP.
600
103
890
370
0.5
4.0
1.6
30
45
10
22
20
16
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
250
550
4.5
1.0
5.8
9.3
5.5
1.6
2.4
25
22
22
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
µC
pF
ns
ns
V
V
Ω
S
A
V