FQAF16N50 Fairchild Semiconductor, FQAF16N50 Datasheet
FQAF16N50
Manufacturer Part Number
FQAF16N50
Description
MOSFET N-CH 500V 11.3A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQAF16N50.pdf
(8 pages)
Specifications of FQAF16N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
320 mOhm @ 5.65A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.32 Ohms
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11.3 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQAF16N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
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QFET
QFET
QFET
QFET
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FQAF16N50 Summary of contents
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2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 ...
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