FDA20N50_F109 Fairchild Semiconductor, FDA20N50_F109 Datasheet

MOSFET N-CH 500V 22A TO-3P

FDA20N50_F109

Manufacturer Part Number
FDA20N50_F109
Description
MOSFET N-CH 500V 22A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA20N50_F109

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59.5nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA20N50_F109
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDA20N50 / FDA20N50_F109 Rev. B1
FDA20N50
500V N-Channel MOSFET
Features
• 22A, 500V, R
• Low gate charge ( typical 45.6 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 27 pF)
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
= 0.23Ω @V
/ FDA20N50_F109
G
GS
D
S
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
TO-3P
FDA Series
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Min.
0.24
--
--
FDA20N50
-55 to +150
G
1110
13.2
± 30
28.0
500
280
300
4.5
2.3
22
88
22
Max.
0.44
UniFET
40
--
S
D
July 2007
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDA20N50_F109 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA20N50 / FDA20N50_F109 Rev. B1 Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 22A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA20N50 / FDA20N50_F109 Rev. B1 Package Reel Size TO-3P -- TO-3PN -- T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C oss 4000 C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDA20N50 / FDA20N50_F109 Rev. B1 Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V Note : ...

Page 4

... Figure 9. Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FDA20N50 / FDA20N50_F109 Rev. B1 (Continued) Figure 8. On-Resistance Variation 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 * Notes : 0 µ 0 250 A D 0.0 -100 0.0 100 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDA20N50 / FDA20N50_F109 Rev. B1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA20N50 / FDA20N50_F109 Rev. B1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 15.60 13.60 ±0.10 ø3.20 ±0.20 2.00 3.00 ±0.20 ±0.20 1.00 5.45TYP ±0.30 [5.45 ] FDA20N50 / FDA20N50_F109 Rev. B1 TO-3P ±0.20 ±0.20 9.60 ±0.20 5.45TYP ±0.30 [5. 4.80 ±0.20 +0.15 1.50 –0.05 1.40 ±0.20 +0.15 0.60 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDA20N50 / FDA20N50_F109 Rev. B1 TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA20N50 / FDA20N50_F109 Rev. B1 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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