FQPF85N06 Fairchild Semiconductor, FQPF85N06 Datasheet - Page 4

• Manufacturer Part Number: FQPF85N06
• Description: MOSFET N-CH 60V 53A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF85N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 26.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 112nC @ 10V
• Input Capacitance (ciss) @ Vds: 4120pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 53 A
• Power Dissipation: 62 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
10
10
10
10
Figure 9. Maximum Safe Operating Area
-1
3
2
1
0
10
Figure 7. Breakdown Voltage Variation
-1
-50
V
T
J
DS
, Junction Tem perature [
vs. Temperature
10
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
0
1 0
1 0
1 0
※ Notes :
- 1
- 2
1. T
2. T
3. Single Pulse
1 0
0
C
J
- 5
= 175
= 25
50
D = 0 . 5
0 . 0 5
0 . 0 2
0 . 0 1
DS(on)
0 . 2
0 . 1
o
C
o
C
DC
100 ms
Figure 11. Transient Thermal Response Curve
10
1
10 ms
100
1 0
(Continued)
o
C]
t
- 4
1 ms
s i n g l e p u l s e
1
※ Notes :
, S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
1. V
2. I
D
GS
= 250 μ A
150
= 0 V
100μ s
10
1 0
2
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
60
50
40
30
20
10
0
25
Figure 8. On-Resistance Variation
1 0
※ N o t e s :
Figure 10. Maximum Drain Current
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
-50
P
DM
50
θ
J M
J C
- T
( t ) = 2 . 4 2 ℃ /W M a x .
C
vs. Case Temperature
T
= P
T
J
vs. Temperature
, Junction Temperature [
C
t
1
0
, Case Temperature [ ℃ ]
D M
75
1 0
t
2
* Z
0
θ
1
/t
J C
2
( t )
50
100
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= 42.5 A
= 10 V
Rev. A1. May 2001
175
200