IRFZ34 Vishay, IRFZ34 Datasheet - Page 2

• Manufacturer Part Number: IRFZ34
• Description: MOSFET N-CH 60V 30A TO-220AB
• Manufacturer: Vishay

Specifications of IRFZ34

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 50 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 88W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ34

IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ34, SiHFZ34 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
S
g
rr
/T
J
T
Between lead, and center of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
R
GS
GS
= 25 °C, I
V
g
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
DS
Reference to 25 °C, I
= 12 , R
= 10 V
= 10 V
J
= 25 °C, I
= 48 V, V
f = 1.0 MHz, see fig. 5
V
V
V
V
V
TYP.
TEST CONDITIONS
DS
GS
DS
DS
DD
-
-
F
= V
= 0 V, I
= 25 V, I
V
= 60 V, V
= 30 V, I
= 30 A, dI/dt = 100 A/μs
V
D
V
GS
DS
S
GS
GS
GS
= 1.0 , see fig. 10
I
D
= 30 A, V
= ± 20 V
see fig. 6 and 13
= 25 V,
, I
= 0 V, T
= 0 V,
= 30 A, V
D
D
D
D
= 250 μA
= 250 μA
GS
I
= 18 A
D
= 30 A,
D
= 0 V
= 18 A
J
GS
= 1 mA
= 150 °C
DS
G
b
= 0 V
c
= 48 V,
b
c
b, c
b
b, c
MAX.
D
S
1.7
40
b, c
MIN.
2.0
9.3
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2476-Rev. B, 01-Nov-10
Document Number: 90368
0.065
TYP.
1200
600
100
100
120
700
7.5
13
29
52
-
-
-
-
-
-
-
-
-
-
-
-
-
°C / W
UNIT
MAX.
± 100
1400
0.05
250
120
230
4.0
1.6
S
25
46
11
22
30
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V