IRFI9Z14G Vishay, IRFI9Z14G Datasheet - Page 4

• Manufacturer Part Number: IRFI9Z14G
• Description: MOSFET P-CH 60V 5.3A TO220FP
• Manufacturer: Vishay

Specifications of IRFI9Z14G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3.2A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 270pF @ 25V
• Power - Max: 27W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5.3A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Peak Reflow Compatible (260 C): No
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 27 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFI9Z14G

IRFI9Z14G, SiHFI9Z14G
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
Document Number: 91170
4
S09-0062-Rev. A, 02-Feb-09