SUM110P08-11L-E3 Vishay, SUM110P08-11L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110P08-11L-E3
• Description: MOSFET P-CH 80V 110A D2PAK
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SUM110P08-11L-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 270nC @ 10V
• Input Capacitance (ciss) @ Vds: 10850pF @ 40V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 50 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.0112 Ohm @ 10 V
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 23.5 A
• Power Dissipation: 13600 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11A
• Drain Source Voltage Vds: -80V
• On Resistance Rds(on): 14.5mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0112Ohm
• Drain-source On-volt: 80V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -50C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SUM110P08-11L-E3; SUM110P08-11L-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
pation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 73472
S-70309-Rev. B, 12-Feb-07
http://www.vishay.com/ppg?73472.
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90
60
30
0
0
0.01
0.1
0.0001
1
Package Limited
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25
0.2
Single
Max Avalanche and Drain Current
D
is based on T
50
0.02
vs. Case Temperature
0.05
75
T
C
- (°C)
J(max)
100
0.001
Normalized Thermal Transient Impedance, Junction-to-Case
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissi-
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150
New Product
175
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Avalanche Current vs. Time
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SUM110P08-11
tin - (Sec)
Vishay Siliconix
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www.vishay.com
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