FDP18N50 Fairchild Semiconductor, FDP18N50 Datasheet - Page 4

• Manufacturer Part Number: FDP18N50
• Description: MOSFET N-CH 500V 18A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r
• Type: Power MOSFETr

Specifications of FDP18N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2860pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.265 Ohms
• Forward Transconductance Gfs (max / Min): 25 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 235 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 265mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.265Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP18N50 / FDPF18N50 Rev. B
Typical Performance Characteristics
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 7. Breakdown Voltage Variation
10
10
20
15
10
10
10
10
5
0
-1
-2
25
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
- FDP18N50
50
vs. Temperature
-50
V
T
DS(on)
T
DS
C
, Case Temperature [
J
, Drain-Source Voltage [V]
, Junction Temperature [
10
0
1
75
50
100
o
100
C]
* Notes :
100 ms
10
DC
1. T
2. T
3. Single Pulse
o
C]
2
10 ms
* Notes :
C
J
= 25
= 150
1. V
2. I
125
1 ms
D
GS
= 250
o
150
C
o
= 0 V
C
100
μ
A
μ
10
s
μ
s
150
200
(Continued)
4
10
10
10
10
10
Figure 9-2. Maximum Safe Operating Area
-1
-2
2
1
0
10
Figure 8. On-Resistance Variation
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Operation in This Area
is Limited by R
-50
- FDPF18N50
V
DS(on)
DS
vs. Temperature
T
, Drain-Source Voltage [V]
10
J
, Junction Temperature [
1
0
50
DC
100 ms
* Notes :
1. T
2. T
3. Single Pulse
10 ms
100
10
C
J
= 150
= 25
2
o
1 ms
C]
o
C
100
o
C
* Notes :
μ
10
1. V
2. I
150
s
D
μ
GS
= 9 A
s
www.fairchildsemi.com
= 10 V
200