IRFBE20 Vishay, IRFBE20 Datasheet
IRFBE20
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IRFBE20 Summary of contents
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... IRFBE20PbF SiHFBE20-E3 IRFBE20 SiHFBE20 = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 1.8 A (see fig. 12 ≤ 150 °C. J IRFBE20, SiHFBE20 Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V 800 DS V ± 1 1.2 I 7.2 DM 0.43 E 180 AS I 1.8 ...
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... IRFBE20, SiHFBE20 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91117 S-81262-Rev. A, 07-Jul- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFBE20, SiHFBE20 Vishay Siliconix www.vishay.com 3 ...
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... IRFBE20, SiHFBE20 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91117 S-81262-Rev. A, 07-Jul-08 ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91117 S-81262-Rev. A, 07-Jul- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms + Fig. 12b - Unclamped Inductive Waveforms IRFBE20, SiHFBE20 Vishay Siliconix D.U. d(off www.vishay.com 5 ...
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... IRFBE20, SiHFBE20 Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91117 ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRFBE20, SiHFBE20 Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...