FDP20N50 Fairchild Semiconductor, FDP20N50 Datasheet - Page 2

• Manufacturer Part Number: FDP20N50
• Description: MOSFET N-CH 500V 20A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP20N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 59.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.23 Ohms
• Forward Transconductance Gfs (max / Min): 24.6 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50 / FDPF20N50 Rev. C
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.0mH, I
3. I
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
ΔBV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
d(on)
d(off)
f
DSS
GSSF
GSSR
r
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
ΔT
≤ 20A, di/dt ≤ 200A/μs, V
FDPF20N50
DSS
FDP20N50
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 20A, V
DD
= 50V, R
DD
≤ BV
Parameter
FDPF20N50
FDP20N50
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
G
DS
GS
GS
GS
F
= 250μA, Referenced to 25°C
/dt =100A/μs
= 25Ω
= 500V, V
= 400V, T
= V
= 40V, I
= 25V, V
= 400V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 250V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 250μA
= 20A
= 20A
DS
GS
D
D
DS
= 10A
C
= 10A
GS
= 250μA
= 20A
= 20A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
-
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min.
500
-
-
3.0
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Typ.
2400
0.20
24.6
45.6
14.8
21.6
7.20
355
375
100
105
507
0.5
27
95
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Quantity
Max Units
3120
-100
0.23
59.5
100
465
200
760
210
220
www.fairchildsemi.com
5.0
1.4
10
20
80
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1
50
50
V/°C
μA
μA
nA
nA
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V