IRFBC20 Vishay, IRFBC20 Datasheet - Page 8

• Manufacturer Part Number: IRFBC20
• Description: MOSFET N-CH 600V 2.2A TO-220AB
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFBC20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.4 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.2 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBC20

TO-220AB
Document Number: 71195
Revison: 01-Nov-10
1
e(1)
E
2
e
3
b
* M
b(1)
Ø P
C
A
J(1)
F
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
DIM.
H(1)
b(1)
e(1)
J(1)
L(1)
Ø P
D
Q
A
b
c
E
e
F
L
14.85
10.04
13.35
MIN.
4.25
0.69
1.20
0.36
2.41
4.88
1.14
6.09
2.41
3.32
3.54
2.60
MILLIMETERS
Package Information
MAX.
15.49
10.51
14.02
4.65
1.01
1.73
0.61
2.67
5.28
1.40
6.48
2.92
3.82
3.94
3.00
Vishay Siliconix
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
MIN.
INCHES
www.vishay.com
MAX.
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
1