FDP20N50F Fairchild Semiconductor, FDP20N50F Datasheet - Page 9

• Manufacturer Part Number: FDP20N50F
• Description: MOSFET N-CH 500V 20A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP20N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 260 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3390pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.26 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP20N50F / FDPF20N50FT Rev. A1
Mechanical Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
±0.20
±0.10
±0.10
]
10.16
9.40
#1
(7.00)
±0.20
±0.20
[2.54
2.54TYP
TO-220F
±0.20
ø3.18
]
±0.10
9
(1.00x45°)
0.50
+0.10
–0.05
2.54
2.76
(0.70)
Dimensions in Millimeters
±0.20
±0.20
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