IRFI9Z24G Vishay, IRFI9Z24G Datasheet - Page 5

MOSFET P-CH 60V 8.5A TO220FP

IRFI9Z24G

Manufacturer Part Number
IRFI9Z24G
Description
MOSFET P-CH 60V 8.5A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI9Z24G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
570pF @ 25V
Power - Max
37W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.28 Ohms
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.5 A
Power Dissipation
37 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFI9Z24G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI9Z24G
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRFI9Z24G
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFI9Z24GPBF
Manufacturer:
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Document Number: 91171
S09-0062-Rev. A, 02-Feb-09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
- 10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
10 %
90 %
DS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
IRFI9Z24G, SiHFI9Z24G
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
R
Vishay Siliconix
D
t
d(off)
V
DS
t
f
+
-
www.vishay.com
V
V
DD
DD
5

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