FCP11N60N Fairchild Semiconductor, FCP11N60N Datasheet - Page 6

• Manufacturer Part Number: FCP11N60N
• Description: MOSFET N-CH 600V 10.8A TO220
• Manufacturer: Fairchild Semiconductor
• Series: SuperMOS™r

Specifications of FCP11N60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 5.4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 1505pF @ 100V
• Power - Max: 94W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.255 Ohms at 10 V
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 6.8 A to 10.8 A
• Power Dissipation: 94 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCP11N60N / FCPF11N60NT Rev. A
www.fairchildsemi.com
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