NDP7060 Fairchild Semiconductor, NDP7060 Datasheet

MOSFET N-CH 60V 75A TO-220AB

NDP7060

Manufacturer Part Number
NDP7060
Description
MOSFET N-CH 60V 75A TO-220AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDP7060

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
13 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
115nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.013 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
75 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
© 1997 Fairchild Semiconductor Corporation
D
J
L
DSS
DGR
GSS
D
NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
General Description
,T
STG
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Drain Current
Maximum Power Dissipation @ T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
- Nonrepetitive (t
- Continuous
- Pulsed
GS
Derate above 25°C
< 1 M )
P
< 50 µs)
C
T
= 25°C
C
= 25°C unless otherwise noted
Features
NDP7060
75A, 60V. R
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
TO-220 and TO-263 (D
and surface mount applications.
DS(ON)
-65 to 175
± 20
± 40
225
150
275
= 0.013
60
60
75
1
2
G
PAK) package for both through hole
@ V
NDB7060
GS
=10V.
D
S
DS(ON)
.
May 1996
NDP7060.SAM
Units
W/°C
W
°C
°C
V
V
V
A

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NDP7060 Summary of contents

Page 1

... NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes ...

Page 2

... MHz GEN Min Typ Max 550 75 60 250 125°C J 100 -100 2 2 125°C 1.4 2.1 3.6 J 0.01 0.013 0.015 0.024 T = 125° 2960 3600 1130 1600 380 800 17 30 128 400 200 100 115 14.5 51 NDP7060.SAM Units µ ...

Page 3

... THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case R JC Thermal Resistance, Junction-to-Ambient R JA Note: 1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. Conditions 37 Note 125° /dt = 100 A/µ Min Typ Max Units 75 A 225 A 0.9 1.3 V 0.84 1 150 °C/W 62.5 °C/W NDP7060.SAM ...

Page 4

... Figure 6. Gate Threshold Variation with V = 5.0V GS 5.5 6.0 6 DRAIN CURRENT (A) D Voltage and Drain Current = 10V T = 125° 25°C -55° DRAIN CURRENT (A) D Current and Temperature 250µ 100 125 T , JUNCTION TEMPERATURE (°C) J Temperature 7.0 8 100 100 120 = V GS 150 175 NDP7060.SAM ...

Page 5

... Variation with Current and Temperature iss oss rss Figure 10. Gate Charge Characteristics t d(on DUT Figure 12. Switching Waveforms 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE ( 75A V = 12V GATE CHARGE (nC d(off INVERTED PULSE W IDTH 1.4 48V 24V NDP7060.SAM ...

Page 6

... Single Pulse 0.01 0.01 0.05 0.1 Figure 15. Transient Thermal Response Curve (continued 25° 125° SINGLE PULSE 0 Figure 14. Maximum Safe Operating Area 0 ,TIME (ms 20V C 25° DRAIN-SOURCE VOLTAGE ( ( 1.0 °C/W JC P(pk ( Duty Cycle NDP7060.SAM ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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