FDPF15N65 Fairchild Semiconductor, FDPF15N65 Datasheet - Page 4

• Manufacturer Part Number: FDPF15N65
• Description: MOSFET N-CH 650V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDPF15N65

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 440 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 3095pF @ 25V
• Power - Max: 38.5W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.44 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 38.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP15N65 / FDPF15N65 Rev. B
Typical Performance Characteristics
Figure 9-1. Safe Operating Area for FDP15N65
Figure 10. Maximum Drain Current vs. Case Temperature
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
18
15
12
-1
-2
9
6
3
0
2
1
0
1.2
1.1
1.0
0.9
0.8
10
25
-100
0
-50
Operation in This Area
is Limited by R
50
vs. Temperature
V
T
DS
T
J
, Junction Temperature [
10
C
, Drain-Source Voltage [V]
, Case Temperature [
0
1
DS(on)
75
50
100
* Notes :
DC
100
1. T
2. T
3. Single Pulse
10
100 ms
o
2
C]
o
C
J
C]
= 150
= 25
10 ms
* Notes :
1. V
2. I
o
C
1 ms
o
D
C
GS
125
= 250
150
= 0 V
100
μ
A
μ
s
10
μ
s
200
(Continued)
10
150
3
4
Figure 9-2. Safe Operating Area for FDPF15N65
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-1
-2
Figure 8. On-Resistance Variation
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
-100
0
Operation in This Area
is Limited by R
-50
-50
DS(on)
V
vs. Temperature
T
T
DS
J
J
, Junction Temperature [
10
, Junction Temperature [
, Drain-Source Voltage [V]
0
1
0
50
50
DC
100 ms
* Notes :
1. T
2. T
3. Single Pulse
10 ms
10
100
C
J
100
= 150
= 25
2
o
o
1 ms
C]
C]
o
C
o
C
100
* Notes :
* Notes :
μ
1. V
2. I
150
s
1. V
2. I
150
10
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D
GS
D
= 7.5 A
GS
μ
= 5.5 A
= 10 V
s
= 10 V
200
10
200
3