IRFBG20 Vishay, IRFBG20 Datasheet - Page 6

• Manufacturer Part Number: IRFBG20
• Description: MOSFET N-CH 1000V 1.4A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBG20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 Ohm @ 840mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.4A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 17 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBG20

IRFBG20, SiHFBG20
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
D.U.T.
I
D
+
-
V
DS