IRFBG20 Vishay, IRFBG20 Datasheet - Page 6
![MOSFET N-CH 1000V 1.4A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRFBG20
Manufacturer Part Number
IRFBG20
Description
MOSFET N-CH 1000V 1.4A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRFBG20PBF.pdf
(8 pages)
Specifications of IRFBG20
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 Ohm @ 840mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
54W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
54 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
31 ns
Minimum Operating Temperature
- 55 C
Rise Time
17 ns
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFBG20
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFBG20
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFBG20PBF
Manufacturer:
TECCOR
Quantity:
5 000
Part Number:
IRFBG20PBF
Manufacturer:
IR
Quantity:
20 000
IRFBG20, SiHFBG20
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
Document Number: 91123
S-81262-Rev. A, 07-Jul-08
D.U.T.
I
D
+
-
V
DS