FQA24N50F Fairchild Semiconductor, FQA24N50F Datasheet - Page 4
![MOSFET N-CH 500V 24A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
FQA24N50F
Manufacturer Part Number
FQA24N50F
Description
MOSFET N-CH 500V 24A TO-3P
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet
1.FQA24N50F.pdf
(8 pages)
Specifications of FQA24N50F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
290W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
290 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA24N50F
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQA24N50F
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQA24N50F
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
Operation in This Area
is Limited by R
V
vs Temperature
J
DS
, Junction Temperature [
10
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
C
J
= 150
= 25
DS(on)
- 5
0 .0 1
o
0 .0 5
0 .0 2
D = 0 .5
C
50
o
0 .1
C
0 .2
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
10
1 0
(Continued)
2
o
C]
- 4
s i n g l e p u ls e
100 s
※ Notes :
t
1. V
2. I
1
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
G S
= 250 μ A
150
10 s
= 0 V
1 0
- 3
200
10
3
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
20
15
10
5
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
θ
J M
DM
J C
50
- T
( t) = 0 .4 3 ℃ /W M a x .
C
vs Case Temperature
= P
T
J
T
t
vs Temperature
, Junction Temperature [
1
C
D M
0
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
75
1
θ J C
/t
2
( t)
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 12 A
Rev. A2, September 2001
= 10 V
150
200