FDA24N50F Fairchild Semiconductor, FDA24N50F Datasheet - Page 4

• Manufacturer Part Number: FDA24N50F
• Description: MOSFET N-CH 500V 24A TO-3
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA24N50F

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 4310pF @ 25V
• Power - Max: 270W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 270 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA24N50F Rev. B
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
200
100
1.2
1.1
1.0
0.9
0.8
0.1
10
1
-75
1
Operation in This Area
is Limited by R
vs. Temperature
-25
T
J
V
, Junction Temperature
DS
, Drain-Source Voltage [V]
10
0.001
DS(on)
0.01
25
0.1
1
10
-5
0.02
0.5
0.2
0.1
0.05
0.01
Single pulse
*Notes:
75
DC
1. T
2. T
3. Single Pulse
10ms
100
C
J
1ms
= 150
Figure 11. Transient Thermal Response Curve
= 25
10
*Notes:
[
1. V
2. I
-4
o
125
100
C
o
D
o
C
GS
]
C
= 250

s
= 0V
60

A

Rectangular Pulse Duration [sec]
175
1000
s
10
-3
(Continued)
10
-2
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
24
18
12
6
0
-75
25
10
*Notes:
-1
1. Z
2. Duty Factor, D= t
3. T
P
DM
-25

JM
T
50
JC
T
J
, Junction Temperature
vs. Temperature
C
- T
(t) = 0.46
, Case Temperature
vs. Case Temperature
C
= P
t
1
10
t
2
DM
25
75
0
o
C/W Max.
* Z
1
/t

JC
2
(t)
100
75
10
1
[
o
*Notes:
C
[
1. V
2. I
]
o
125
C
125
D
]
GS
= 12A
= 10V
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175
150