IRFI9634G Vishay, IRFI9634G Datasheet

MOSFET P-CH 250V 4.1A TO220FP

IRFI9634G

Manufacturer Part Number
IRFI9634G
Description
MOSFET P-CH 250V 4.1A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI9634G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
680pF @ 25V
Power - Max
35W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.1A
Drain Source Voltage Vds
-250V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohms
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
35 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFI9634G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI9634G
Manufacturer:
IR
Quantity:
18
Part Number:
IRFI9634G
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFI9634G
Manufacturer:
ST
0
Part Number:
IRFI9634G
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFI9634GPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFI9634GPBF
Quantity:
42 650
Company:
Part Number:
IRFI9634GPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91168
S09-0062-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
TO-220 FULLPAK
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 4.1 A, dI/dt ≤ - 640 A/µs, V
(Ω)
J
= 25 °C, L = 62 mH, R
a
G
D
c
a
a
S
V
b
GS
DD
G
= - 10 V
= 25 Ω, I
≤ V
G
DS
P-Channel MOSFET
Single
, T
- 250
8.0
38
18
AS
J
≤ 150 °C.
= - 4.1 A (see fig. 12).
S
D
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
1.0
at - 10 V
6-32 or M3 screw
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI9634GPbF
SiHFI9634G-E3
IRFI9634G
SiHFI9634G
= 100 °C
= 25 °C
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 150 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
IRFI9634G, SiHFI9634G
stg
design,
- 55 to + 150
LIMIT
- 250
300
± 20
- 4.1
- 2.6
0.28
- 4.1
- 5.0
- 16
520
3.5
1.1
35
10
low
Vishay Siliconix
d
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
and
1

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IRFI9634G Summary of contents

Page 1

... TO-220 FULLPAK IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = - 4.1 A (see fig. 12). AS ≤ 150 ° IRFI9634G, SiHFI9634G Vishay Siliconix device design, low on-resistance SYMBOL LIMIT V - 250 DS V ± 4 2 0.28 E 520 4.1 ...

Page 2

... IRFI9634G, SiHFI9634G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91168 S09-0062-Rev. A, 02-Feb-09 IRFI9634G, SiHFI9634G = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI9634G, SiHFI9634G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91168 S09-0062-Rev. A, 02-Feb-09 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91168 S09-0062-Rev. A, 02-Feb- Driver 15 V IRFI9634G, SiHFI9634G Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) ...

Page 6

... IRFI9634G, SiHFI9634G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91168 ...

Page 7

... SD • D.U.T. - device under test Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and - 3 V drive devices GS Fig For P-Channel IRFI9634G, SiHFI9634G Vishay Siliconix + + P. www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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