IRFPC60PBF Vishay, IRFPC60PBF Datasheet - Page 2

• Manufacturer Part Number: IRFPC60PBF
• Description: MOSFET N-CH 600V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFPC60PBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 9.6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 210nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 280W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 280000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPC60PBF

IRFPC60, SiHFPC60
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
= 25 °C, unless otherwise noted)
a
This datasheet is subject to change without notice.
SYMBOL
SYMBOL
ΔV
R
V
R
R
R
t
t
C
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
SM
thCS
thJC
I
t
thJA
t
DS
oss
t
SD
on
rss
iss
gd
S
rr
fs
gs
r
D
f
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
T
Reference to 25 °C, I
= 10 V
= 10 V
J
= 480 V, V
= 25 °C, I
TYP.
0.24
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TEST CONDITIONS
R
T
DS
DS
DD
GS
DS
-
-
g
J
dI/dt = 100 A/μs
= 25 °C, I
= 4.5 Ω, R
= 600 V, V
= V
= 50 V, I
= 300 V, I
= 0 V, I
V
V
see fig. 10
GS
V
DS
S
GS
GS
I
GS
D
= 16 A, V
= ± 20 V
, I
= 25 V,
= 16 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
F
= 250 μA
= 250 μA
D
I
D
GS
= 9.6 A
D
= 16 A,
= 18 Ω
= 16 A,
b
= 9.6 A
D
= 0 V
GS
= 1 mA
J
b
DS
G
G
= 125 °C
= 0 V
b
= 360 V,
b
MAX.
D
S
0.45
b
D
S
40
b
-
MIN.
600
2.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0442-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
Document Number: 91245
TYP.
3900
830
440
110
610
5.0
6.6
98
19
54
56
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.40
100
500
210
110
920
4.0
1.8
9.9
26
16
64
S
-
-
-
-
-
-
-
-
-
-
-
-
and L
mV/°C
UNIT
D
nC
nH
μC
)
nA
μA
pF
ns
ns
Ω
S
A
V
V
V