FQH8N100C Fairchild Semiconductor, FQH8N100C Datasheet
FQH8N100C
Specifications of FQH8N100C
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FQH8N100C Summary of contents
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... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FQH8N100C Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... V = 50V ≤ 8.0A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQH8N100C Rev. A Package Reel Size TO-247 -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...
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... I , Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3500 C 3000 iss 2500 C 2000 oss 1500 1000 C rss 500 Drain-Source Voltage [V] DS FQH8N100C Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 20V GS Note : ℃ ※ ...
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... 150 J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQH8N100C Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0 250 µA D 0.0 100 150 200 o C] Figure 10. Maximum Drain Current 8 DS(on) µ µ 100 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQH8N100C Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQH8N100C Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... FQH8N100C Rev www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® ACEx Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...