IRFR9120 Vishay, IRFR9120 Datasheet - Page 6
![MOSFET P-CH 100V 5.6A DPAK](/photos/5/40/54019/698-dpak_to-225aa_sml.jpg)
IRFR9120
Manufacturer Part Number
IRFR9120
Description
MOSFET P-CH 100V 5.6A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR9120.pdf
(8 pages)
Specifications of IRFR9120
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
5.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
390pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.6 Ohms
Drain-source Breakdown Voltage
- 100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR9120
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Part Number:
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Part Number:
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Manufacturer:
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Quantity:
20 000
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S09-0060-Rev. A, 02-Feb-09
Document Number: 91280
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD