FQA160N08 Fairchild Semiconductor, FQA160N08 Datasheet - Page 7

• Manufacturer Part Number: FQA160N08
• Description: MOSFET N-CH 80V 160A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA160N08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 290nC @ 10V
• Input Capacitance (ciss) @ Vds: 7900pF @ 25V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 92 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 160 A
• Power Dissipation: 375 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, September 2000