IRFPF30 Vishay, IRFPF30 Datasheet - Page 7
![MOSFET N-CH 900V 3.6A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFPF30
Manufacturer Part Number
IRFPF30
Description
MOSFET N-CH 900V 3.6A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFPF30.pdf
(8 pages)
Specifications of IRFPF30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.7 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1200pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N Channel
Continuous Drain Current Id
3.6A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
3.7ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
3.7 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.6 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFPF30
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPF30
Manufacturer:
IR
Quantity:
12 500
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91249.
Document Number: 91249
S11-0442-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Rever e
recovery
current
+
R
-
g
D.U.T.
Note
a. V
Driver gate drive
D.U.T. l
D.U.T. V
Inductor current
= 5 V for logic level device
P.W.
D
D
waveform
This datasheet is subject to change without notice.
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver ame type a D.U.T.
• I
• D.U.T. - device under te t
Diode recovery
current
D
controlled by duty factor “D”
Circuit layout con ideration
dV/dt
• Low tray inductance
•
• Low leakage inductance
current tran former
dI/dt
round plane
D =
-
g
Period
P.W.
+
V
I
V
DD
D
= 10 V
+
-
IRFPF30, SiHFPF30
V
DD
a
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com
7