FQL40N50F Fairchild Semiconductor, FQL40N50F Datasheet

MOSFET N-CH 500V 40A TO-264

FQL40N50F

Manufacturer Part Number
FQL40N50F
Description
MOSFET N-CH 500V 40A TO-264
Manufacturer
Fairchild Semiconductor
Series
FRFET™r
Datasheet

Specifications of FQL40N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
40A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
200nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
40 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQL40N50F
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQL40N50F
Quantity:
3 000
©2001 Fairchild Semiconductor Corporation
FQL40N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
where the body diode is used such as phase-shift ZVS,
basic full-bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQL Series
C
C
= 25°C unless otherwise noted
TO-264
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 40A, 500V, R
• Low gate charge ( typical 155 nC)
• Low Crss ( typical 95 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode ( max, 250ns )
G
!
!
DS(on)
Typ
0.1
--
--
! "
! "
FQL40N50F
-55 to +150
= 0.11
!
!
!
!
S
D
"
"
"
"
"
"
1800
160
460
300
500
3.7
40
25
40
46
20
30
@V
FRFET
Max
0.27
30
GS
--
September 2001
= 10 V
Rev. A2, September 2001
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQL40N50F Summary of contents

Page 1

... C Parameter September 2001 FRFET = 0. DS(on " " ! " ! " G " " " " FQL40N50F Units 500 40 25 160 30 1800 V/ns 460 3.7 W/°C -55 to +150 300 Typ Max Units -- 0.27 °C/W 0.1 -- °C °C/W Rev. A2, September 2001 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 2.0mH 40A 50V ≤ 40A, di/dt ≤ 450A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 12000 10000 C iss 8000 C oss 6000 4000 C rss 2000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 20.00 (8.30) (7.00) 4.90 0.20 (1.50) 2.50 0.20 5.45TYP [5.45 ] 0.30 ©2001 Fairchild Semiconductor Corporation TO-264 0.20 (8.30) (1.00) (0.50) (7.00) (1.50) 3.00 0.20 +0.25 1.00 –0.10 5.45TYP [5.45 ] 0.30 (2.00) (1.50) +0.25 0.60 2.80 –0.10 0.30 Rev. A2, September 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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