IRFP460PBF Vishay, IRFP460PBF Datasheet

MOSFET N-CH 500V 20A TO-247AC

IRFP460PBF

Manufacturer Part Number
IRFP460PBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFP460PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±20V
Drain Current (max)
20A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP460PBF
Manufacturer:
MOLEX
Quantity:
20 002
Part Number:
IRFP460PBF
Manufacturer:
ST
0
Part Number:
IRFP460PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP460PBF
0
Company:
Part Number:
IRFP460PBF
Quantity:
60 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 20 A, dI/dt ≤ 160 A/µs, V
= 50 V, starting T
(Ω)
TO-247
a
G
J
D
= 25 °C, L = 4.3 mH, R
S
c
a
a
DD
b
V
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
210
110
29
G
= 25 Ω, I
D
S
C
Power MOSFET
0.27
= 25 °C, unless otherwise noted
V
GS
AS
6-32 or M3 screw
at 10 V
= 20 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-247
IRFP460PbF
SiHFP460-E3
IRFP460
SiHFP460
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFP460, SiHFP460
design,
- 55 to + 150
LIMIT
300
± 20
500
960
280
2.2
3.5
1.1
20
13
80
20
28
10
low
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFP460PBF Summary of contents

Page 1

... S TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 IRFP460PbF SiHFP460-E3 IRFP460 SiHFP460 = 25 °C, unless otherwise noted °C ...

Page 2

... IRFP460, SiHFP460 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

Page 3

... S-81360-Rev. A, 28-Jul- °C 91237_03 = 25 °C C 3.5 3.0 2.5 4.5 V 2.0 1.5 1.0 0.5 = 150 °C 0.0 91237_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFP460, SiHFP460 Vishay Siliconix ° 150 C 1 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I ...

Page 4

... IRFP460, SiHFP460 Vishay Siliconix 10 000 MHz iss rss gd 8000 oss ds 6000 C 4000 C oss 2000 C rss Drain-to-Source Voltage ( 91237_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 250 100 120 Q , Total Gate Charge (nC) 91237_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 91237_07 Fig Typical Source-Drain Diode Forward Voltage ...

Page 5

... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91237 S-81360-Rev. A, 28-Jul-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRFP460, SiHFP460 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...

Page 6

... IRFP460, SiHFP460 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µF D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 2400 ...

Page 7

... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91237. ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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