IRFP460PBF Vishay, IRFP460PBF Datasheet
IRFP460PBF
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IRFP460PBF Summary of contents
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... S TO-220 devices. The TO-247 is similar but superior to the N-Channel MOSFET earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 IRFP460PbF SiHFP460-E3 IRFP460 SiHFP460 = 25 °C, unless otherwise noted °C ...
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... IRFP460, SiHFP460 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... S-81360-Rev. A, 28-Jul- °C 91237_03 = 25 °C C 3.5 3.0 2.5 4.5 V 2.0 1.5 1.0 0.5 = 150 °C 0.0 91237_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFP460, SiHFP460 Vishay Siliconix ° 150 C 1 ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics I ...
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... IRFP460, SiHFP460 Vishay Siliconix 10 000 MHz iss rss gd 8000 oss ds 6000 C 4000 C oss 2000 C rss Drain-to-Source Voltage ( 91237_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 250 100 120 Q , Total Gate Charge (nC) 91237_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss 10 91237_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91237 S-81360-Rev. A, 28-Jul-08 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( Fig. 12b - Unclamped Inductive Waveforms IRFP460, SiHFP460 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFP460, SiHFP460 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. 50 kΩ 0.2 µ 0.3 µF D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit www.vishay.com 6 2400 ...
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... V GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91237. ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...