IRFPS43N50K Vishay, IRFPS43N50K Datasheet - Page 3

• Manufacturer Part Number: IRFPS43N50K
• Description: MOSFET N-CH 500V 47A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS43N50K

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 90 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 8310pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 47 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.09Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFPS43N50K

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91262
S11-0112-Rev. C, 31-Jan-11
1000
1000
0.01
100
100
0.1
0.1
10
10
1
1
0.1
0.1
TOP
BOTTOM
TOP
BOTTOM
Fig. 2 - Typical Output Characteristics
Fig. 1 - Typical Output Characteristics
V
V
DS
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1
1
20µs PULSE WIDTH
T = 150 C
20µs PULSE WIDTH
T = 25 C
J
J
10
10
4.5V
4.5V
°
°
100
100
IRFPS43N50K, SiHFPS43N50K
1000
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
0.1
10
1
-60 -40 -20
4
I =
D
Fig. 3 - Typical Transfer Characteristics
T = 150 C
48A
J
5
V
T , Junction Temperature ( C)
GS
J
6
, Gate-to-Source Voltage (V)
0
°
T = 25 C
20 40 60 80 100 120 140 160
J
7
°
8
Vishay Siliconix
V
20µs PULSE WIDTH
DS
9
= 50V
V
10
GS
www.vishay.com
°
=
11
10V
12
3