APT6040BVFRG Microsemi Power Products Group, APT6040BVFRG Datasheet - Page 3

• Manufacturer Part Number: APT6040BVFRG
• Description: MOSFET N-CH 600V 16A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT6040BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 3120pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0.0
30
24
18
12
30
24
18
12
16
12
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
6
0
6
0
8
4
0
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
25
0
0
V
V
V DS > I D (ON) x R DS (ON)MAX.
DS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
I
D
V GS =6V, 7V, 10V & 15V
J
T
, JUNCTION TEMPERATURE (°C)
50
50
= 8A
T J = +25°C
T J = +125°C
= 10V
C
, CASE TEMPERATURE (°C)
2
0
25
100
75
50
4
150
100
75
T J = -55°C
4.5V
5.5V
100 125 150
4V
5V
6
200
125
150
250
8
1.15
1.10
1.05
1.00
0.95
0.90
1.5
1.4
1.3
1.2
1.1
1.0
0.9
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
30
24
18
12
6
0
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
-50
-50
0
0
V
DS
FIGURE 5, R
V GS =7V, 10V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
V
I
NORMALIZED TO
J
6
D
GS
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
5
C
V GS =15V
= 10V @ 8A
, CASE TEMPERATURE (°C)
V GS =10V
0
0
12
DS
25
25
10
(ON) vs DRAIN CURRENT
18
50
50
15
6V
75
75
V GS =20V
24
100 125 150
100 125 150
APT6040B_SVFR(G)
20
5.5V
4.5V
30
5V
4V
25
36