APT5018BLLG Microsemi Power Products Group, APT5018BLLG Datasheet - Page 3
![MOSFET N-CH 500V 27A TO-247](/photos/5/32/53213/to-247_sml.jpg)
APT5018BLLG
Manufacturer Part Number
APT5018BLLG
Description
MOSFET N-CH 500V 27A TO-247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT5018BLLG.pdf
(5 pages)
Specifications of APT5018BLLG
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
180 mOhm @ 13.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
2596pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curves
Case temperature
Junction
temp. ( ”C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
(Watts)
Power
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
-25
I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
D
T
GS
J
= 13.5A
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
T J = +125°C
2
C
, CASE TEMPERATURE (°C)
T J = +25°C
0
RC MODEL
25
75
0.161
0.259
4
50
100
6
75
100 125 150
T J = -55°C
125
8
0.00994F
0.236F
150
10
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
1.13
1.12
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
DS
FIGURE 5, R
V GS =15 &10V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
-25
-25
T
GS
NORMALIZED TO
10
I
J
D
5
T
, JUNCTION TEMPERATURE (°C)
= 10V @ 13.5A
, DRAIN CURRENT (AMPERES)
C
V GS =10V
, CASE TEMPERATURE (°C)
0
0
10
20
DS
25
25
(ON) vs DRAIN CURRENT
15
30
50
50
5.5V
6.5V
7.5V
7V
6V
8V
75
75
20
40
V GS =20V
100 125 150
100 125 150
APT5018BLL - SLL
25
50
30
60