APT20M40BVRG Microsemi Power Products Group, APT20M40BVRG Datasheet - Page 3

• Manufacturer Part Number: APT20M40BVRG
• Description: MOSFET N-CH 200V 59A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT20M40BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 4860pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
100
100
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
80
60
40
20
60
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT20M40BVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
-25
T
V
GS
J
V GS =8V, 9V, 10V & 15V
T
, JUNCTION TEMPERATURE ( C)
20
50
C
= 10V
D
, CASE TEMPERATURE ( C)
[Cont.]
2
T J = +25 C
0
T J = +125 C
25
40
75
T J = +125 C
T J = +25 C
50
T J = -55 C
4
100
60
75
T J = -55 C
5.5V
4.5V
100 125 150
6
6.5V
125
80
6V
5V
4V
150
100
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
100
1.6
1.4
1.2
1.0
0.8
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
V
0
0
DS
FIGURE 5, R
V GS =15V
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
= 10V @ 0.5 I
, JUNCTION TEMPERATURE ( C)
NORMALIZED TO
T
, DRAIN CURRENT (AMPERES)
40
V GS =10V
C
2
, CASE TEMPERATURE ( C)
0
0
DS
25
25
7V
80
(ON) vs DRAIN CURRENT
4
D
[Cont.]
50
V GS =8V, 9V & 10V
50
120
6
75
75 100 125 150
V GS =20V
100 125 150
160
8
4.5V
5.5V
6.5V
6V
5V
4V
200
10