APT10M19BVRG Microsemi Power Products Group, APT10M19BVRG Datasheet - Page 3

• Manufacturer Part Number: APT10M19BVRG
• Description: MOSFET N-CH 100V 75A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M19BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 6120pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.00
1.75
1.50
1.25
1.00
0.75
0.50
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
200
160
120
125
100
80
40
75
50
25
80
60
40
20
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
APT10M19BVR
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
-25
250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
T
V
GS
J
T
, JUNCTION TEMPERATURE ( C)
10
50
C
= 10V
V GS =9V, 10V & 15V
D
, CASE TEMPERATURE ( C)
T J = +25 C
[Cont.]
2
0
T J = +125 C
25
20
75
50
4
T J = +125 C
T J = +25 C
T J = -55 C
100
30
75
T J = -55 C
100 125 150
6
125
40
6.5V
5.5V
4.5V
7V
8V
6V
5V
150
50
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.00
1.80
1.60
1.40
1.20
1.00
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
200
160
120
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
40
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
-25
-25
T
I
J
D
50
= 10V @ 0.5 I
, JUNCTION TEMPERATURE ( C)
T
NORMALIZED TO
, DRAIN CURRENT (AMPERES)
C
1
, CASE TEMPERATURE ( C)
V GS =15V
0
0
V GS =20V
100
V GS =10V
DS
25
25
(ON) vs DRAIN CURRENT
2
D
[Cont.]
150
50
50
3
75
75 100 125 150
10V
200
100 125 150
9V
4
250
6.5V
4.5V
5.5V
8V
7V
6V
5V
300
5