APT5017SVFRG Microsemi Power Products Group, APT5017SVFRG Datasheet

APT5017SVFRG

Manufacturer Part Number

APT5017SVFRG

Description

MOSFET N-CH 500V 30A D3PAK

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT5017BVFRG.pdf (4 pages)

Specifications of APT5017SVFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

170 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

4V @ 1mA

Gate Charge (qg) @ Vgs

300nC @ 10V

Input Capacitance (ciss) @ Vds

5280pF @ 25V

Power - Max

370W

Mounting Type

Surface Mount

Package / Case

D³Pak (2 leads + tab)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

• Fast Recovery Body Diode

• Lower Leakage

• TO-247 or Surface Mount D

MAXIMUM RATINGS

STATIC ELECTRICAL CHARACTERISTICS

Symbol

D(on)

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Parameter

Drain-Source Voltage

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

On State Drain Current

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

is a new generation of high voltage N-Channel enhancement

POWER MOS V

(Repetitive and Non-Repetitive)

PAK Package

APT Website - http://www.advancedpower.com

= 25°C

= V

• 100% Avalanche Tested

• Faster Switching

= 25°C

> I

D(on)

, I

= ±30V, V

= V

= 0.8 V

x R

= 0V, I

= 1.0mA)

DSS

DS(on)

= 10V, 0.5 I

, V

DSS

= 250µA)

Max, V

= 0V)

, V

= 0V)

D[Cont.]

= 0V, T

All Ratings: T

= 10V)

FREDFET

)

= 125°C)

APT5017BVFR

APT5017SVFR

500V 30A 0.170

= 25°C unless otherwise specified.

MIN

500

APT5017BVFR_SVFR

-55 to 150

TO-247

1300

2.96

TYP

500

120

±30

±40

370

300

1000

±100

MAX

0.17

250

PAK

FREDFET

Ohms

Amps

Watts

Amps

UNIT

W/°C

UNIT

Volts

µA

°C

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APT5017SVFRG Summary of contents

Page 1

POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss 3 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t (on) Turn-on Delay Time d t Rise ...

Page 3

Typical Performance Curves =6V, 7V, 8V, 10V & 15V 100 150 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS -55°C ...

Page 4

Typical Performance Curves 200 100 OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM ...

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