APT6025BLLG Microsemi Power Products Group, APT6025BLLG Datasheet - Page 3

• Manufacturer Part Number: APT6025BLLG
• Description: MOSFET N-CH 600V 24A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6025BLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 250 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 2910pF @ 25V
• Power - Max: 325W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
2.5
2.0
1.5
1.0
0.5
0.0
80
70
60
50
40
30
20
10
25
20
15
10
Junction
temp. (°C)
0
5
0
-50
25
0
V
V DS > I D (ON) x R DS(ON) MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
(watts)
FIGURE 8, R
Power
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
1
-25
, GATE-TO-SOURCE VOLTAGE (VOLTS)
V
T
I
GS
D
J
T
, JUNCTION TEMPERATURE (°C)
= 12A
50
= 10V
C
2
, CASE TEMPERATURE (°C)
0
3
DS(ON)
25
T J = +125°C
T J = +25°C
75
4
RC MODEL
50
vs. TEMPERATURE
5
100
0.0175
0.143
0.219
75
6
100 125 150
T J = -55°C
125
7
8
150
0.00401F
0.00641F
0.158F
9
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
70
60
50
40
30
20
10
0
-50
-50
0
0
V
DS
FIGURE 5, R
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
GS
T
I
NORMALIZED TO
J
D
5
T
, JUNCTION TEMPERATURE (°C)
= 10V @ I
10
, DRAIN CURRENT (AMPERES)
C
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
V GS =15 &10V
DS(ON)
25
25
D
20
= 12A
15
50
vs DRAIN CURRENT
50
V GS =20V
30
75
75
20
100 125 150
100 125 150
40
8V
25
7V
5.5V
6.5
6V
5V
30
50