APT47N60BCFG Microsemi Power Products Group, APT47N60BCFG Datasheet

MOSFET N-CH 600V 46A TO-247

APT47N60BCFG

Manufacturer Part Number
APT47N60BCFG
Description
MOSFET N-CH 600V 46A TO-247
Manufacturer
Microsemi Power Products Group
Series
CoolMOS™r
Datasheet

Specifications of APT47N60BCFG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
83 mOhm @ 29A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
46A
Vgs(th) (max) @ Id
5V @ 2.9mA
Gate Charge (qg) @ Vgs
255nC @ 10V
Input Capacitance (ciss) @ Vds
7290pF @ 25V
Power - Max
417W
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
STATIC ELECTRICAL CHARACTERISTICS
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
• Ultra Low R
• Low Miller Capacitance
• Ultra Low Gate Charge, Q
• Avalanche Energy Rated
• Extreme dv / dt Rated
MAXIMUM RATINGS
C
Symbol
Symbol
T
B
R
V
Power Semiconductors
V
J
dv /
(VR)DS
I
I
DS(on)
GS(th)
V
E
E
I
,T
DSS
GSS
I
O
P
T
DSS
DM
I
AR
GS
AR
AS
D
D
STG
L
dt
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
O
LMOS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
DS(ON)
g
2
1
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Popular TO-247 or Surface Mount D
Super Junction FREDFET
DS
C
APT Website - http://www.advancedpower.com
2
= V
C
C
= 25°C
DS
= 25°C
= 100°C
3
= 480V, I
GS
GS
4
DS
DS
, I
= ±20V, V
GS
D
(V
= 600V, V
= 600V, V
= 0V, I
= 2.9mA)
GS
D
= 10V, I
= 46A, T
D
DS
= 250µA)
GS
GS
= 0V)
D
= 0V)
= 0V, T
J
= 29A)
= 125°C)
APT47N60BCF
APT47N60BCFG*
All Ratings: T
C
= 150°C)
3
Package
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
600V 46A 0.083Ω
C
= 25°C unless otherwise specified.
MIN
600
APT47N60B_SCF(G)
3
-55 to 150
APT47N60SCF
APT47N60SCFG*
TYP
1800
1.67
600
115
±30
417
260
4
46
29
80
20
1
(B)
0.083
MAX
5000
±100
6
5
G
D
3
PAK
Ohms
Amps
Watts
Amps
UNIT
W/°C
Volts
Volts
UNIT
Volts
Volts
V/ns
mJ
µA
nA
°C
(S)
D
S

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APT47N60BCFG Summary of contents

Page 1

... CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" trade- mark of Infineon Technologies AG." APT47N60BCF APT47N60BCFG* Super Junction FREDFET • Intrinsic Fast-Recovery Body Diode • Extreme Low Reverse Recovery Charge • ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 5 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t Turn-on Delay Time d(on) t Rise ...

Page 3

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL V > MAX. DS D(ON) DS(ON) 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE T = -55° GATE-TO-SOURCE VOLTAGE (VOLTS) ...

Page 4

OPERATION HERE LIMITED BY R (ON =+25° =+150°C J SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA ...

Page 5

Typical Performance Curves 10% t d(on Drain Current 90 Drain Voltage 10% Figure 18, Turn-on Switching Waveforms and Definitions APT30DQ60 Gate Voltage T 125°C J Figure 19, Turn-off Switching Waveforms and Definitions APT47N60BCF_SCF(G) ...

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