APT6021BLLG Microsemi Power Products Group, APT6021BLLG Datasheet - Page 2

• Manufacturer Part Number: APT6021BLLG
• Description: MOSFET N-CH 600V 29A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT6021BLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 210 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3470pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
t
R
R
C
t
C
dv
temperature
C
V
Q
Q
Q
d(off)
E
E
d(on)
E
E
I
Q
t
SM
I
θJC
θJA
oss
t
t
SD
rss
S
iss
on
off
on
off
/
gs
gd
rr
r
f
g
rr
dt
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic
Junction to Case
Junction to Ambient
10
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
0.05
3
10
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -
GS
S
SINGLE PULSE
= -
29A
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
29A
, dl
, dl
S
S
/dt = 100A/µs)
10
= -
S
/dt = 100A/µs)
-3
29A
INDUCTIVE SWITCHING @ 125°C
)
INDUCTIVE SWITCHING @ 25°C
V
RESISTIVE SWITCHING
V
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
DD
Test Conditions
DD
I
I
D
D
I
I
dv
device itself.
D
D
= 400V, V
= 29A, R
= 29A, R
= 400V V
V
V
= 29A @ 25°C
= 29A @ 25°C
/
V
V
V
R
dt
V
f = 1 MHz
DD
DD
DS
GS
GS
G
GS
numbers reflect the limitations of the test circuit rather than the
= 1.6Ω
= 300V
= 300V
= 25V
= 10V
= 15V
= 0V
10
G
G
GS
j
-2
GS
= +25°C, L = 3.09mH, R
= 5Ω
= 5Ω
= 15V
= 15V
I
S
≤
-
I
D
29A
Note:
Peak T J = P DM x Z θJC + T C
di
MIN
/
MIN
Duty Factor D = t 1 / t
MIN
dt
10
≤ 700A/µs
-1
t 1
G
t 2
= 25Ω, Peak I
3470
9.29
TYP
TYP
635
325
205
500
250
TYP
664
48
80
20
44
10
25
7
4
V
2
R
APT6021BLL_SLL
≤
V
DSS
MAX
MAX
MAX
0.31
116
1.3
40
29
1.0
L
8
= 29A
T
J
≤ 150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
J
C