APT10050B2VFRG Microsemi Power Products Group, APT10050B2VFRG Datasheet - Page 4

MOSFET N-CH 1000V 21A T-MAX

APT10050B2VFRG

Manufacturer Part Number
APT10050B2VFRG
Description
MOSFET N-CH 1000V 21A T-MAX
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT10050B2VFRG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
500nC @ 10V
Input Capacitance (ciss) @ Vds
7900pF @ 25V
Power - Max
520W
Mounting Type
Through Hole
Package / Case
T-MAX
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT10050B2VFRG
Manufacturer:
IR
Quantity:
20 000
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
These dimensions are equal to the TO-247 without the mounting hole.
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
10
20
16
12
.5
.1
FIGURE 10, MAXIMUM SAFE OPERATING AREA
5
1
8
4
0
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
V
1
0
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
T-MAX
DS
I
T C =+25°C
T J =+150°C
SINGLE PULSE
D
Dimensions in Millimeters and (Inches)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= I
LIMITED BY R DS (ON)
D
OPERATION HERE
Q
[Cont.]
100
g
, TOTAL GATE CHARGE (nC)
5
TM
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
10
(B2) Package Outline
200
V DS =200V
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
50 100
V DS =100V
5.45 (.215) BSC
300
2-Plcs.
V DS =500V
400
15.49 (.610)
16.26 (.640)
500 1000
500
10µS
100µS
1mS
10mS
100mS
DC
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
30,000
10,000
5,000
1,000
500
100
100
50
10
5
1
.01
V
V
0
Dimensions in Millimeters and (Inches)
DS
SD
TO-264 (L) Package Outline
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.4
T J =+150°C
.1
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.8
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
1
1.2
2.79 (.110)
3.18 (.125)
2-Plcs.
T J =+25°C
APT10050B2VFR_LVFR
1.6
C iss
C oss
C rss
10
19.51 (.768)
20.50 (.807)
2.0
50
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source

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