APT10040B2VRG Microsemi Power Products Group, APT10040B2VRG Datasheet - Page 2

• Manufacturer Part Number: APT10040B2VRG
• Description: MOSFET N-CH 1000V 25A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10040B2VRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 630nC @ 10V
• Input Capacitance (ciss) @ Vds: 9400pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
SM
I
oss
t
t
rss
SD
iss
S
gs
gd
r
f
rr
JC
JA
g
rr
0.005
0.001
0.05
0.01
050-5909
0.2
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
revA 8-2000
D=0.5
0.02
0.05
0.01
0.2
0.1
10
-4
3
SINGLE PULSE
1
2
(V
S
(Body Diode)
GS
= -I
S
(Body Diode)
= -I
= 0V, I
D[Cont.]
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
D[Cont.]
S
, dl
= -I
, dl
S
/dt = 100A/µs)
D[Cont.]
S
/dt = 100A/µs)
I
D
10
I
= 0.5 I
D
)
3
4
-2
Test Conditions
V
V
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
f = 1 MHz
D[Cont.]
V
DS
GS
GS
G
GS
= 0.5 V
D[Cont.]
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25°C
= +25°C, L = 9.60mH, R
@ 25°C
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
t 2
1060
7830
25.5
APT10040 B2VR - LVR
TYP
TYP
TYP
715
386
415
216
37
13
13
57
9
t 1
/ t
2
9400
1010
MAX
0.20
MAX
MAX
100
580
630
330
1.3
40
L
45
26
26
86
20
25
10
= 25A
Amps
UNIT
UNIT
UNIT
°C/W
Volts
nC
µC
pF
ns
ns